Abstract
We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, Vc, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: Vc approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of Vc as well as the threshold value of Vl, beyond which Vc saturates, can be modulated by application of a voltage, Vr, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology.
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