Abstract
As the critical dimensions of copper (Cu) interconnects approach dimensions near the mean free path of the metal (39.9 nm at room temperature), a rise in resistivity is observed. This phenomenon, termed resistivity size-effect, is the result of electron scattering at grain boundaries and surfaces. Given that electron scattering from grain boundaries is a major contributor to the resistivity rise in nanoscale interconnects, in this study we demonstrate epitaxial electrodeposition of single crystal and bicrystal films, using Co, Ru and Cu as three metals of choice. In detail, we will address the choice of seed layer, the role of symmetry of the seed layer, the sign and magnitude of the misfit strain (compressive, none, tensile), the epitaxial orientation relationship of the electrodeposited film and the seed layer, the impact of underpotential deposition on film nucleation, and the growth morphology. The role of electrolyte, ion concentration and pH will also be addressed.
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