Abstract
Diffusion in thin films can cause serious problems in microelectronic packaging. Recent work has shown that the diffusion process in thin films consists of (1) interdiffusion at the interface between two films, (2) diffusion along the grain boundaries of the films and (3) diffusion into the interiors of the grains. These processes cause problems such as loss of bond strength, loss of solderability and loss of conductivity. Highly idealized models and formalisms have been developed and used to measure these processes. Arrhenius plots are used to extrapolate the measurements to conditions in the field. Structures, materials and thicknesses can then be chosen to minimize the problems.
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