Abstract
The diffusion of Vanadium has been studied in V-doped GaAs layers (GaAs:V) grown by Metal-Organic Chemical Vapour Deposition (MOCVD) using secondary ion mass spectroscopy (SIMS). The vanadium (V) concentration profiles of sandwiched structures made of alternatively undoped and V doped GaAs layers have shown a concentration independent diffusion coefficient (DV) for varying V doping levels from 1018 to 1019cm−3. Measurements of DV at 550, 615 and 680°C indicate that the temperature dependence of DV can be represented by the Arrhenius equation: Dv=2.4×10-6exp(-1.51eV/kBT)cm2s−1. It is suggested that V diffuses via interstitial sites.
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