Abstract
Natural diamonds implanted with 160 keV, 340 keV and 69 MeV nickel ions were annealed at temperatures up to 2200 C and studied by cathodoluminescence. The depth distribution profiles of the implanted nickel and radiation defects were investigated. It was shown that high temperature diffusion strongly influences the distribution both of nickel and of radiation defects. The vacancy-enhanced mechanism of diffusion was supposed for nickel in ion implanted diamond.
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