Abstract
Diffusion length of minority carriers was determined in not intentionally doped Cd 0.93Zn 0.07Te and Hg 0.8Cd 0.2Te single crystals by the EBIC method at temperatures 80–300 K using an evaporated Au Schottky barrier ((CdZn)Te) or a P–N junction produced by ion milling or plasma etching ((HgCd)Te). The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurement with photoluminescence for the (CdZn)Te was observed.
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