Abstract
The results of excess carrier diffusion length investigations in GaN and in the light emitting structures (LES) based on MQW InGaN / GaN with different ordering of mosaic structures are presented. It is confirmed that the diffusion length values in these structures indeed are essentially lower than 1 μm. The Electron Beam Induced Current investigations have shown that the effective diffusion length measured on GaN structures could be determined by the mosaic domain boundary effect on the excess carrier transport. Such nanosize domains could also determine the lateral localization in the MQW light emitting diodes. The mosaic structure ordering effect on the quantum efficiency of LES and high values of the effective carrier lifetime in well-ordered LES are discussed.
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