Diffusion Coefficients and Anion Vacancy Concentrations for the Zirconium‐Zirconium Dioxide System

Abstract

Experiments have been carried out at 386°C to determine the concentration of anion vacancies at the metal‐oxide interface and the diffusion coefficients for anion vacancies in zirconium dioxide films on zirconium by the “interruption kinetic technique.” The conditions for which this technique is valid are discussed. The anion vacancy concentration in the oxide at the oxide‐metal interface (386°C) proved to be as compared to calculated from the phase diagram. Diffusion coefficients can be expressed as Theoretical calculation of the entropy of vacancy formation and values of Do are made assuming three models. It is concluded that electrons are trapped at anion vacancies or impurity centers, rather than act as Fermi‐electrons in the conduction band.