Abstract
The TaSiN barrier layers for Pt/TaSiN/poly-Si structure were prepared by dc reactive magnetron sputtering. The resistivity of as-deposited films with an optimum composition of was about 1,277 μΩ cm. The TaSiN films are amorphous over a wide range of annealing temperatures up to 900°C and showed an abrupt increase of resistivity at annealing temperatures of 700 and 750°C because of the formation of amorphous phase onto TaSiN films. The characteristics of Pt/TaSiN/poly-Si structure before and after annealing at various temperatures became linear, which is indicative of Ohmic characteristics, independent of annealing temperature. The contact resistivities of Pt/TaSiN/poly-Si structures with increasing annealing temperature up to 700°C did not vary greatly compared with those of as-deposited electrode structures. The specific contact resistivities of as-deposited and annealed structures at 700°C were about and respectively. © 2001 The Electrochemical Society. All rights reserved.
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