Abstract
Kinetics of molybdenum disilicide (MoSi 2) layer transformation into Mo 5Si 3 one was studied at isothermal annealing of the MoSi 2/Mo diffusion couple within the temperature interval 1200–1800 °C. It was revealed that the growth of intermediate silicide layer followed a parabolic law and did not accompanied by formation of the lowest Mo 3Si silicide. By analyzing the diffusion problem solid-phase diffusion coefficient of silicon in the Mo 5Si 3 layer was calculated.
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