Abstract
Investigations by field emission microscopy show that two distinguishable Ti oxide layers are formed on rounded Pt crystallites by diffusion from an oxygen-deficient TiO 2 vapor deposit. Layer I, appearing at 700 K, covers all high Miller index areas, [110], and the vicinal areas of [100]. Layer II is formed at 800 K. In contrast to Layer I, it exhibits a layer boundary. Layer II covers all crystallographic areas except [111]. When it breaks up upon heating above 800 K, numerous high work function islands (~2 × 10 10 cm −2) are formed in the high Miller index areas. Because of the large work function difference between these islands and their surroundings, very strong electrostatic fields (patch fields) are created. The islands grow at elevated temperatures and disappear at about 1100 K. Above this temperature, Ti oxide is adsorbed only in the vicinal areas of [111] (1100 to 1200 K) and on [100] (1200 to 1240 K). The possible influence of the patch fields on chemical surface reactions is discussed.
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