Diffraction Line Broadening Analysis if Broadening Is Caused by Both Dislocations and Limited Crystallite Size.

Abstract

The determination of dislocation distribution parameters is discussed for specimens where both strain broadening caused by dislocations and size broadening occur. If the strain broadening is well described by a model due to Wilkens, several methods are possible for the analysis of the broadening of diffraction lines. In sputter deposited nickel layers, three different methods for diffraction line broadening analysis yield identical results. The recrystallization of the nickel layers was investigated by annealing the layers at various temperatures in the range 300 K to 500 K. With increasing annealing temperature, the microstructure of the layers changed from a microstructure with small grains and high dislocation density, via a microstructure that is a mixture of small grains with high dislocation density and large grains with low dislocation density, to a microstructure with large grains and low dislocation density.