Abstract
Exciton energy calculations, including the binding energy, are presented which show that quantum wells subject to diffusion with constant and concentration-dependent diffusion coefficients can have the same emission/absorption energy. The proposal of I Harrison (1994 Semicond. Sci. Technol. 9 2053), that it is possible to distinguish between these two forms of the diffusion coefficient by fitting emission energies in annealed quantum wells for several different well widths, is validated for a typical II - VI system in which the dominant recombination process is excitonic. An analysis of recent experimental data of exciton energies in quantum wells, before and after a rapid thermal anneal, demonstrates that the diffusion of Mn from the barriers into the wells can be explained in terms of a constant diffusion coefficient.
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