Abstract
An original method is described for the determination of the flatband voltage in metal-insulator-a-Si:H devices based on capacitance-frequency measurements at variable temperature done in the accumulation regime. The comparison with results obtained on c-Si devices shows for the first time that the density of positive fixed charge in PECVD silicon nitride increases when going from amorphous to crystalline and from n to p-type substrate. A model of tunneling of holes from the plasma-irradiated substrate to Si-Si or Si dangling bonds in silicon nitride is proposed to explain our results and others from the literature.
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