Abstract
The spectra for individual Si- and C-core partial dislocations were obtained using optical emission microscopy. Both electroluminescence and photoluminescence revealed similar spectra. The Si-core spectra peaked at 700nm, consistent with the reported spectra from collection of dislocations. For the C core, a dominant IR band starting at 850nm was revealed for injections around 0.1A∕cm2. For an injection at 1A∕cm2, this band saturated and a band at 700nm dominated. This C-core band at 700nm was broader, and its intensity peak was lower than the Si core. Results are discussed along with existing theoretical models of deep levels.
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