Abstract
We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.
Highlights
Semi-insulating (SI) iron-doped indium phosphide (InP:Fe) is widely used in electronic and photonic devices operating in the terahertz spectral range (THz range, 0.1~10 THz), including Schottky diode detectors[1], high-electron mobility transistors[2], photomixers[3], and quantum cascade lasers (QCLs)[4,5,6]
The dielectric constants of nominally undoped and low-doped InP have been studied in the THz spectral range recently[10, 11]; they are strongly affected by a free carrier plasma that screens the intrinsic characteristics of SI InP material, especially at frequencies below 5 THz
Given the importance of SI InP to a variety of applications[1,2,3,4,5,6], we believe that this report will be useful to a wide range of groups involved in the microwave and THz semiconductor devices research and development
Summary
Semi-insulating (SI) iron-doped indium phosphide (InP:Fe) is widely used in electronic and photonic devices operating in the terahertz spectral range (THz range, 0.1~10 THz), including Schottky diode detectors[1], high-electron mobility transistors[2], photomixers[3], and quantum cascade lasers (QCLs)[4,5,6]. The dielectric constants of nominally undoped and low-doped InP have been studied in the THz spectral range recently[10, 11]; they are strongly affected by a free carrier plasma that screens the intrinsic characteristics of SI InP material, especially at frequencies below 5 THz. In this study, we present detailed investigation of the electrodynamic response of SI InP:Fe in the 2–700 cm−1 (0.06–21 THz) spectral region. The studied samples are obtained from commercial vendors and have resistivities exceeding 5 × 106 Ω·cm that corresponds to a free-carrier concentration below 109 cm−3. As expected for such low free carrier concentration, our optical data show no plasma effect in the entire spectral range of interest. We present and discuss the data obtained with the thicker sample
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