Abstract
BaTi2O5 (BT2) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT2 thick films were deposited at high deposition rates. The BT2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature (Tdep), the orientation of BT2 thick films changed from (112) to (511), and the grain size increased. The (112)-oriented BT2 thick film deposited at Tdep=956K had dielectric constant (ε′) of 67 and dielectric loss (tanδ) of 0.015, while the (511)-oriented BT2 thick film deposited at Tdep=964K had ε′ of 74 and tanδ of 0.019 at 300K and 1MHz.
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