Abstract
A high-pressure high-temperature diamond based sensor has been developed for the use in diamond anvil cells. The electronic structure of the sensor is that of p-i-p unipolar diode with boron doped p-type regions separated by an i-region containing compensated boron acceptors. The sensor has been fabricated by high-temperature high-energy boron ion implantation followed by high-energy carbon ion irradiation on the working surface of an anvil made of type IIa natural diamond. The performance of the sensor has been tested at pressures up to 70 kbar and temperatures up to 800 C. The sensor has a resolution of 5 bar for pressure and of 0.01 °C for temperature.
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