Abstract
A diamond-coating layer is studied as a heat spreading layer for a thin-GaN light-emitting diode (LED) chip. Our results show that this diamond layer can effectively spread the heat and improve the temperature uniformity of a thin-GaN LED chip, which enhances the heat dissipation efficiency down to the heat sink. With the diamond heat spreading layer, the junction temperature of the thin-GaN LED was reduced by 20 C at 1-A current input and the uniformity of the temperature distribution is also greatly improved.
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