Abstract
A diamond field-emission triode with low gate turn-on voltage of 10 V and high gain factor of 250 is reported. The gated diamond triode was fabricated with a self-aligning gate technique from a silicon-on-insulator wafer. Ia–Vg plot of emission characteristics from four tips shows a very low gate turn-on voltage of 10 V and high emission current of 4 μA at gate voltage of 20 V. Ia–Va plots of emission characteristics demonstrate the desired saturation behavior of field-emission transistor with a high voltage gain of 250. The low turn-on gate voltage and high gain factor are comparable to solid-state metal–oxide–semiconductor field-effect transistor devices, confirming the diamond field-emission triode has significant potential for integrated circuit-compatible vacuum microelectronic applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
