Abstract
The dominant gas species produced in low-pressure organometallic vapor phase epitaxy (OMVPE) using trimethylgallium (TMG)-arsine (AsH3) and triethylgallium (TEG)-AsH3 systems have been studied with a quadrupole mass spectrometer. The gas species markedly depended on the growth pressure, which varied from 0.05 to 100 Torr. At pressures below 1 Torr, alkylarsines increased markedly with decreasing pressure. The dominant hydrocarbon species were CH4 in the TMG-AsH3 system and C2H4, C2H6 and C3H8 in the TEG-AsH3 system. In the TMG-AsH3 system, the CH4 concentration decreased with decreasing pressure below 1 Torr. In the TEG-AsH3 system, however, the species of the dominant hydrocarbons changed with pressure. A detailed analysis shows that CH3 radicals increase below 1 Torr, in good agreement with the increased carbon incorporation in OMVPE GaAs layers grown below 1 Torr.
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