Device Simulation of Novel In-Plane-Gated Field-Effect Transistors

Abstract

The first three-dimensional numerical device simulation of the novel in-plane-gated field-effect transistor with a quasi-one-dimensional electron channel is reported. Information about the electrical characteristics is obtained by a calculation of the output and the transfer behavior of the device on the basis of a classical drift-diffusion model. The quasi-one-dimensional current path is defined laterally by two thin insulating lines on a pseudomorphic, modulation-doped AlGaAs/InGaAs/GaAs heterostructure with a high-density two-dimensional electron gas. Gate leakage currents and a parasitic bypass current flow can be avoided by deep isolation lines and a modified cap layer sequence, respectively. High transconductance values are expected only for highly p-doped isolation regions. Room temperature operation of a single channel device is demonstrated with a measured transconductance of 18 µ S and a maximum current of above 0.11 mA.