Abstract
A technique to obtain mosaic diamond films and substrates approaching single crystal quality is described. The method includes the patterned etching of structures in Si substrates. The structures hold and orient diamond seeds < 100 μm in diameter, forming an array of crystallographically oriented seeds. Homoepitaxial diamond is grown on this array to produce a continuous diamond film containing low-angle grain boundaries of a degree or less. Initial characterization indicates that the films are electrically equivalent to single crystal diamond films. Diamond substrates 1 mm thick and a few square centimeters in area have been made using this technique.
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