Abstract
Surface reaction process of fluorocarbon radicals (CFx) in the contact hole etching for ultra-large-integrated circuits (ULSIs) is presented. When H2 is added to fluorocarbon gases, the surface reactions of CF and CF2 radicals are intensively reported. CF2 radicals contribute considerably to the fluorocarbon film deposition under plasma irradiations. The behaviours of CF radical densities in the plasma over the film composition on the chamber walls are investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
