Abstract
In order to minimize image degradation of IBIC (ion beam induced charge) during observation, the single ion beam induced charge (SIBIC) imaging technique has been developed by using a single ion microprobe, which enables us to hit a particular site of a device with single ions one by one. With only five He single ions per pixel, we have succeeded in obtaining reasonable quality images of an active area of a device. Since the number of defects induced by five single ions is quite low, the irradiated device was still alive for subsequent process and device diagnoses.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
