Abstract
In this work, we simulated and experimentally assessed the possibility to detect, through electrical transduction, hybridization of DNA molecules on MOS-like devices, having different dielectrics: SiO2, Si3N4 and SiO2/Si3N4/SiO2 (ONO). The electrical characterization was performed after the various functionalization steps, consisting of dielectric activation, silanization, DNA spotting and anchoring, and after the hybridization process, to test the devices effectiveness as DNA recognition biosensors. The experimental results were used to validate device simulations. The comparison shows the ability to determine a priori the DNA probe density needed to maximize the response. The results confirm that the structures analyzed are sensitive to the immobilization of DNA and its hybridization.
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