Abstract
The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.
Highlights
Beam Sci. 2021, 5, 5. https://doi.org/For material nanofabrication using an electron beam, a sample is irradiated with a highintensity electron beam using a field-emission electron gun
The development of a pulsed electron source with high emittance in a short time is effectively used for material nanofabrication and for high-speed observation of electron irradiation-induced material behavior and observation with reduced electron irradiation effect of polymers when used for transmission electron microscope (TEM)
The development of a TEM equipped with a laser photocathode electron gun has been in progress since around 2000
Summary
For material nanofabrication using an electron beam, a sample is irradiated with a highintensity electron beam using a field-emission electron gun. The advantage of using the NEA semiconductor surface is it reduces the work function. Even if the work function is lowered on the NEA metal surface, the energy tremely small. Even if the work function is lowered on the NEA metal surface, the energy dispersion of electrons excited to the unoccupied level cannot be as small as that of a dispersion of electrons excited to the unoccupied level cannot be as small as that of a semsemiconductor with a bandgap. NEA treatment on the semiconductor surface is extremely effective from the viewpoint of electron energy dispersion. Figure shows the appearanceanofacceleration a pulse TEM equipped with the developed photocapable of NEA surface processing, tube, an ion pump, two non-evaporable cathode electron gun.aThe pulsed electron gun consists of an ultrahigh vacuum chamber getter (NEG). Cold field-emission electron gunthe andacceleration the acceleration tube were removed
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