Abstract
New silicon drift detector (SDD) arrays are being developed for use as extraterrestrial X-ray spectrometers. For the first time these SDDs have been produced on low resistivity, n-type silicon, with a thinner thickness than normal, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as those found around Jupiter). To achieve low-energy X-ray response, a thin entrance window was produced using a double implantation technology. The design, fabrication and performance of these detectors are presented here.
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