Abstract
The development of a nonvolatile organic write-once-read-many-times (WORM) memory device, consisting of a 100nm layer of indigo sandwiched between indium tin oxide cathode and Al anode, is reported. This device is found to be at its ON state and can be switched to the OFF state by applying a positive bias with the ON/OFF current ratio being up to 106. The device exhibits storage stability of over 108h in air without encapsulation. This device offers the possibility of a low-cost biodegradable data storage as Indigo is inexpensive, bio-degradable and non-toxic. The operational mechanism of the device is discussed in terms of dipoles induced at the Al-indigo interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
