Abstract
Extreme Ultra Violet Lithography (EUVL) is considered to be a major candidate for the Next Generation Lithography. To achieve reflective optics, EUV mask consists of absorber layer, reflective multilayer (ML) with protection capping layer. Buffer layer can be used for silicon capped EUV blanks to enhance the etch selectivity against absorber etching. It has been reported that Ruthenium (Ru) material has better property on oxidation resistance compared to standard silicon (Si) capping layer. Ru capping layers have advantage for its high etch selectivity, which enables buffer layer free EUV mask structure. However, thin Ru layers should be designed due to high EUV absorption property. This paper includes the evaluation of current process performance of Ta-based absorber process on Ru capped ML blanks. It also includes resist patterning by EB writing, Ru capping layer etch effect as well as absorber patterning with CD uniformity, linearity, Line Edge Roughness (LER) and selectivity between absorber and resist or Ru capping layer. Inspection result is also included as a recent result.
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