Abstract
New data have been gained since a comparison of the “open-end” and closed-end” machines was made in 1968 [A. M. Hanfmann and F. J. Viola, Proc. 4th Intern. Vacuum Congress (Physical Society, London, 1969), Part II, pp. 549–553]. The “open-end” machine remained a reliable tool for sputtering resistor film (nitrided or oxy-nitrided tantalum). Development of the “closed-end” machine was aimed at optimizing the properties of capacitor (beta-tantalum) film. Beneficial effects of the lowered substrate temperature on capacitor film properties were realized (a) by improved cooling of the machine and (b) by introduction of dc-enhanced ac sputtering (H. Y. Kumagai, U. S. Patent No. 3 616 402). The dependence of dielectric leakage on sputtering voltage and current was studied. A favorable operating region was defined and used in production.
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