Abstract
Summary form only given. In past two decades, modern industrial fabrication processes of semiconductors strongly rely on the plasma source generated by very high frequency power because of its benefits of high deposition and etching rates. In addition, large plasma chamber is needed in order to increase the production capacity. However, the underlying physics associated with high frequency power and large-scale plasma source are not well understood and cannot be easily obtained from the knowledge and experiences based on the small scale chamber design. One of the significant influences is the standing electromagnetic (EM) wave effect which induces the non-uniform properties on the wafer during processing. The difficulties of plasma diagnosis and measurement result in lengthy and expensive plasma source design process, traditionally based on the purely trial-and-error approach. Fortunately, the rapid advancement of high-performance computing provides an alternative that may address the above issues in a timely manner with relatively low cost.
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