Abstract
A 1280 × 1,024 In0.53Ga0.47As short wave infrared (SWIR) focal plane array (FPA) detector with a planar-type back-illuminated process has been fabricated. With indium bump flip-chip bonding techniques, the InGaAs photodiode arrays were hybrid-integrated to the CMOS readout integrated circuit (ROIC) with correlated double sampling (CDS). The response spectrum is 0.9–1.7 μm. The test results show that the dark current density is 2.25 nA/cm2 at 25 °C, the detectivity D* is up to 1.1 × 1013 cm · Hz1/2/W, the noise electron is as low as 48 e− under correlated double sampling mode, the quantum efficiency is 88% at 1550 nm, and the operability is more than 99.9%. Moreover, the dark current and noise electron have been studied theoretically in depth. The results indicate that the diffusion current is the main contribution of the dark current, and the readout integrated circuit noise electron is the main source of FPA noise.
Highlights
PIN InGaAs shor twave infrared (SWIR) focal plane array (FPA) detectors have attracted extensive attention due to their high detectivity [1], high quantum efficiency, room temperature operation, low dark current, and good radiation resistance [2]
The test results show that the dark current density is 2.25 nA/cm2 at 25°C, the operability is up to 99.98%, and the quantum efficiency (QE) is 88% at 1550 nm
The results show the readout integrated circuit (ROIC) noise electron is 42 e−, and the InGaAs FPA noise electron is 72 e− under non-correlated double sampling (CDS) mode, while the ROIC noise electron is 20 e− and the InGaAs FPA noise electron is 48 e− under CDS mode
Summary
PIN InGaAs shor twave infrared (SWIR) focal plane array (FPA) detectors have attracted extensive attention due to their high detectivity [1], high quantum efficiency, room temperature operation, low dark current, and good radiation resistance [2]. It is critical to develop large-format PIN arrays with low pitch and low dark current density at higher operation temperatures. The fabrication of a high performance 1,280 × 1,024 InGaAs SWIR FPA detector with a pitch of 15 μm is presented. The EPI material quality was optimized and the Zn diffusion depth was controlled precisely to reduce dark current. The InP and InGaAs around the active region were etched to exposed n+-InP buffer layer for n-type metal evaporation with E-beams, P-metal and N-metal were annealed for ohmic contact. According to the above process, the smaller format 640 × 512 15 μm InGaAs SWIR detectors were fabricated and applied in space exploration in 2019
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