Abstract
Fully depletable pn CCD's on high resistivity 280 pm thick silicon (e e:-, 2.5 kIlcm) have been fabricated. Their operation is based on the semiconductor drift chamber principle proposed by Gatti and Rehak. They are designed as energy and position sensitive radiation detectors for X-rays and (minimum-) ionizing particles. Two-dimensional semiconductor device modeling demonstrates the basic charge transfer mechanisms. Prototypes of the detectors have been tested in quasistatic and dynamic conditions. A preliminary charge transfer inefficiency e, has been determined to less than 10-3 at shift frequencies varying between 500 kHz and 6 MHz. The charge loss during the transfer is discussed. As a consequence, an improved design had been developed for a new fabrication iteration which is currently being tested.
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