Abstract
In semiconductor manufacturing, diamond disks are indispensable for dressing chemical mechanical polishing (CMP) pads. Recently, 450 mm (18 inch) diameter wafers have been used to improve output and reduce wafer production cost. To polish 450 mm diameter wafers, the diameter of polishing pads must be increased to 1050 mm. In particular, because diamond disks are limited to 100 mm diameters, a much greater number of working crystals will be required for dressing a 1050 mm diameter pad. Consequently, new diamond disks must be developed. In this study, novel arrangements are made using a braze in diamond patterns, which are radial with a cluster arrangement of 3-4 grits per cluster. Furthermore, a double-faced combined diamond disk is developed. The polishing pad surface was characterized, and the effect of different diamond conditioners on wafer removal rate was studied. This research aims to develop a more suitable diamond disk for dressing 1050 mm diameter polishing pads.
Highlights
Chemical mechanical polishing (CMP) is a process used in the ultra-large-scale integration fabrication industry to planarize interlevel dielectric [1]
Ra of the pad dressed by radial and cluster-arranged diamond disk (RCADD) is relatively higher; this may affect wafer material removal rate (MRR), as discussed later
The result was in agreement with a later studied proposed wear rate model of the polishing pad, like that of Tso and Ho [18], who pointed out the empirical equation as follows: PWR
Summary
Chemical mechanical polishing (CMP) is a process used in the ultra-large-scale integration fabrication industry to planarize interlevel dielectric [1]. This technology employed by IBM in the 1980s is the most attractive one as it can achieve high surface quality with high polishing efficiency and it can provide a flat and smooth surface on the wafer for lithography needs [2]. The reaction product gradually accumulates in holes and grooves in the pad surface, leading to “glazing” of the pad [3,4,5]. The wafer removal rate decreases because slurry can no longer be distributed uniformly on the pad surface [6,7,8].
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