Abstract
The quantum-dot light-emitting diodes (QLEDs) that emit near-infrared (NIR) light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration. To improve the performance of NIR QLEDs, we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene) (P3HT) as the hole transport layer (HTL). P3HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light. The usage of P3HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs. With the additional incorporation of an interlayer of poly [9,9-bis(3ʹ-( N , N -dimethylamino)propyl)-2,7-flourene]- alt -2,7-(9,9-dioctylfluorene)], P3HT obviously improves the performance of NIR QLEDs. As electroluminescent synaptic devices, these NIR QLEDs exhibit important synaptic functionalities such as short- and long-term plasticity, and may be employed for image recognition.
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