Abstract
Many defects in semi-insulating (SI) cadmium zinc telluride (Cd1-xZnxTe or CZT) ingots grown by the melt methods act as trapping centers to introduce deep levels in the band gap, which has strong effects on CZT detection properties. The thermally stimulated current (TSC) spectroscopy was used to measure these traps, and the initial rise method and the simultaneous multiple peaks analysis (SIMPA) method were introduced to characterize trap levels in SI-CZT:In. The results show that there is a larger error in the determination for the trap peaks with the initial rise method due to the interference of overlapping peaks, while the SIMPA method demonstrates a better performance in resolving these overlapping peaks simultaneously for a full characterization of trap levels. On this basis, a theoretical SIMPA fitting, which is composed of ten trap levels and a deep donor level EDD dominating the dark current in SI-CZT:In, is achieved. Furthermore, the reason of high resistivity in CZT:In was explained by the relationship between EDD level and Fermi level.
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