Abstract
Piezoelectric (PZT) films with different orientations and microstructures were fabricated on different substrate structures in one chip. To investigate the substrate structural effect of Pb(Zr0.52Ti0.48) films, different substrate structures of a Pt membrane and Pt on a Si substrate (called platinized Si) were fabricated after Si back-side etching. The PZT films were fabricated on the prepared substrates by RF magnetron sputtering with a single oxide target. After the annealing of a PZT film, different microstructures and Forientations were observed from different parts of the sample. The PZT film on the Pt membrane has (001) orientation and grains of ~1 μm size. On the other hand, the PZT film on platinized Si has (111) orientation and grains of ~3 μm size.
Highlights
Ferroelectric thin films have attracted considerable attention owing to their multifunctional applications to micro-electromechanical systems (MEMS) devices, which require the high dielectric, piezoelectric, and electrooptic properties of ferroelectric materials.[1,2,3,4,5] Among the ferroelectric materials, Pb(Zr,Ti)O (PZT) is one of the best candidates for these applications owing to its high ferroelectric and piezoelectric properties.[6]. In particular, its superior piezoelectricity meets the requirement for various sensors, e.g., tactile and biomass-detecting sensors
A circle of 1 cm diameter was etched in the middle of the Si substrate by deep reactive ion etching from the back side, and the PZT film was deposited on a Pt/Ti membrane by RF magnetron sputtering and annealed
The crystalline structures of PZT films on the Pt membrane and Pt on the Si substrate were evaluated by X-ray diffraction analysis
Summary
Ferroelectric thin films have attracted considerable attention owing to their multifunctional applications to micro-electromechanical systems (MEMS) devices, which require the high dielectric, piezoelectric, and electrooptic properties of ferroelectric materials.[1,2,3,4,5] Among the ferroelectric materials, Pb(Zr,Ti)O (PZT) is one of the best candidates for these applications owing to its high ferroelectric and piezoelectric properties.[6]. Dynamic random access memory (DRAM) devices need a high ferroelectric value, which can be obtained from highly [111]-oriented PZT films, and MEMS actuators need a large displacement, which can be obtained from highly (001)-oriented PZT films. This means that the sensibility of the sensors can be enhanced by the (001) orientation control of PZT films. Many researchers have introduced various methods of controlling the orientation of PZT films for their own device purpose.[9,10,11,12,13,14] In this study, PZT films were fabricated under different substrate conditions to investigate their microstructures and orientations
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
