Abstract
Pure films of carbon were grown by implanting C + ions at energies in the range 0.1–2 keV in various substrates. Analysis of their compositions by various ion beam interactions showed that there was little mixing with the substrate layers and radiation-enhanced diffusion in the films, and the impurity content decreased with decreasing ion energy. On the basis of spectroscopic investigations of optical absorption and soft X-ray emission, we also established that the percentage of diamond-like carbon (DLC) increased monotonically with ion energy. DLC was only obtained during the preliminary stages of implantation in silicon or SiC at energies below 1 keV, because of their catalytic effect on the sp 3 hybridization of carbon atoms. Films formed at 2 keV exhibited similar properties to those grown by laser-plasma deposition and contained about 75% diamond microcrystals. They were also more diamond-like than films grown by sputtering processes.
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