Abstract
We report on new accurate FTIR measurements of the hydrogen content of amorphous silicon nitride (SiN) layers by evaluating the corresponding absorption lines with the help of polynomial fits. Our measurements show large differences in the hydrogen concentrations comparing layers which were deposited by plasma-enhanced chemical vapor deposition with layers deposited by thermal low-pressure chemical vapor deposition. The hydrogen content of the layers can be successfully reduced by applying various annealing procedures.
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