Abstract
The development in the field of semiconductor materials and electronic devices has a great impact on systems with renewable energy sources. Determination of the functional parameters of photovoltaic solar cells is essential for the subsequent usage of these semiconductor devices. Research was made on type P+PNN+ monocrystalline silicon wafers. Crystallographic measurements of the photovoltaic solar cell were made by means of FESEM-FIB Auriga Workstation. Initial data were selected from the study of models found in the specialized literature. The experimental results were compared to classical mathematical models. Measurements made on the photovoltaic solar cell were realised in laboratory conditions on the NI-ELVIS platform produced by National Instruments.
Highlights
Absorption of photons under certain conditions in a semiconductor plate creates electrical power
Measurements made on the photovoltaic solar cell were realised in laboratory conditions on the NI-ELVIS platform produced by National Instruments [26, 27]
A mathematical model of the physical processes which leads to the generation of electric currents in a complex photovoltaic solar cell type P+PNN+ with a finite recombination velocity on the surface is proposed
Summary
Absorption of photons under certain conditions in a semiconductor plate creates electrical power. The principle of conversion is based on the fact that in a semiconductor the electrons removed from the nucleus can be transformed into free conducting electrons in motion. This creates a positive load and a negative carrier simultaneously. If there is a potential difference in the semiconductor material due to a p-n junction, this load carrier can be forced to direct to an external circuit and an electric power can be produced. No other force can lead them in this direction This means that loaded particles will have to survive until they reach the potential barrier. The resulting lifetime is one of the key factors for the efficiency of photovoltaic energy production [1]
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