Abstract
The non-linear dependence of photoconductivity (PC) on wavelength and intensity of illumination was used to evaluate the lifetime and quantum efficiency coefficient of carrier photogeneration in RF sputtered thin films of a-Si:H. The change of spatial distribution of radiation intensity over the sample thickness with the change of photon energy has been taken into account. Due to this, for the photon energies greater than the semiconductor energy gap, the decay of PC with an increase of absorption coefficient of radiation could be described using only one recombination parameter: the lifetime factor proportional to carrier lifetime. The comparison of the values of absorption coefficient obtained from the measurements of optical transmittance, CPM and the quantum efficiency coefficient is presented. The determination of carrier lifetime as a function of energy of photons that generate the free carriers is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
