Abstract
Concentration of In impurity doped in GaAs semiconductor was determined by PIXE method non-destructively using a plate target. The concentration of In in the range from 0.05 to 1 wt.% in GaAs crystals is given from PIXE peak intensities by [In] (wt.%)=(0.39±0.06)×In Kα/ (Ga Kβ+As Kα).
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