Abstract
The etch rate of single-crystalline 4H–SiC is studied using chlorine trifluoride gas at 673–973 K and atmospheric pressure in a cold wall horizontal reactor. The 4H–SiC etch rate can be higher than 10 µm/min at substrate temperatures higher than 723 K. The etch rate increases with the chlorine trifluoride gas flow rate. The etch rate is calculated by taking into account the transport phenomena in the reactor including the chemical reaction at the substrate surface. The flat etch rate at the higher substrate temperatures is caused mainly by the relationship between the transport rate and the surface chemical reaction rate of chlorine trifluoride gas.
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