Abstract
Photoellipsometry, a nondestructive and contactless optical method, was applied to InP/ n+-InP structures. Three InP/ n+-InP samples were studied, each containing an undoped InP layer of thickness L (L=40, 100, and 150 nm, respectively) epitaxially grown on top of a heavily doped n-InP substrate. The measured spectra were analyzed using the Franz-Keldysh theory, in which the effects of broadening and contributions from the heavy and light holes were included. Our main objective was to determine the built-in electric field strength in the top layer of each given sample. The results of our analysis not only verify that a uniform built-in field was present in the top layer but also suggest that the surface Fermi level was pinned at a fixed position for each sample studied. In addition, a small downward shift of the band-gap energy was observed in the three InP samples. We believe that this type of shift is due to the field-induced effect on the sample materials.
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