Abstract
Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3 (STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
