Abstract
Intra- and interlayer atom-atom correlations in molecular beam epitaxially grown dilute InGaAs alloys were studied using cross-sectional scanning tunneling microscopy. By imaging individual chemical constituents we construct a large ensemble of ``atom maps'' from which two-dimensional In-In pair correlation functions were deduced. We found a total absence of interlayer pair correlation along $[001]$ and a strong negative correlation for the nearest neighbor (nn) pair along $[110]$, corresponding to a repulsive interaction energy of 0.1 eV for the nn In pairs along $[110]$. In addition, a weak long-range oscillation in the correlation function along $[110]$ is observed.
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