Abstract
The deterioration of GaAs Esaki diodes is caused by the rapid diffusions of interstitial impurities. Among the diffusion processes involved, the electric-field-assisted diffusion of interstitial Zn which acts as a donor is the most important one. The migration of impurities produced intermediate states and a defect level or levels, most probably a trap level, in the forbidden band. This defect level is then responsible for the vicinity peak at about 0.5 V found in deteriorated samples. Vacancies at and in the vicinity of a junction act against deterioration. It is found that a quantity C/nIp, where C is the junction capacitance measured at the valley in pf, n=Ip/Iv, Ip and Iv the peak and the valley currents in ma is a useful measure of deteriorability of GaAs Esaki diodes. A GaAs Esaki diode with C/nIp<0.35 deteriorates significantly while a unit with C/nIp<0.8 will not.
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