Abstract
Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.
Highlights
There is a tangible demand in the semiconductor industry for progressively diminution in the dimensions of electronic circuits, and consequent increase in the circuits speed due to RC delay reduction
We have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications
In the simulation, each parameter is swept until the point, where the transition frequency is maximum, can be found [8], and these points are used in the design
Summary
There is a tangible demand in the semiconductor industry for progressively diminution in the dimensions of electronic circuits, and consequent increase in the circuits speed due to RC delay reduction. As the dimensions of circuits shrink, fabrication processes become more complicated. Silicon-based manufacturing technology encounters problems such as inefficiency of the Dennard’s method in design [1], leakage current increase, arduous impurities control, and more erroneous placement in submicron scale. Researchers are looking for new methods of manufacturing and modeling and new materials to fabricate the electronic devices. One of the proposed solutions is using field effect transistors with carbon nanotube as channel material. Due to their extra ordinary properties such as high mobility
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