Abstract

Solar energy is sustainable and environmental friendly and act as a better substitute to fossil fuels. Solar cell converts energy into electrical energy Single-junction solar cells are the easy for realization and fabrication as compared to other solar device. Multiband solar cell enhance efficiency of the emerging solar devices. Hence the above analysis mentions the simulation of GaAs solar cell. The semiconductor material is arranged with different layers and each layers have different band gap values. The bandgap of AlGaAs ranges from 1.422.16 and 1.4eV is the bandgap of GaAs. The highest efficiency was observed when the material of all the layers except buffer layer was AlGaAs. The material used in the buffer layer is Silicon. The emitter and base thickness are varied to obtain high efficiency. Maximum efficiency recorded when the base and emitter thickness is 1.5µm and 2µm respectively is 26.74%. The technique used for simulation is TCAD and the values obtained for parameters like Voc, Fill factor and Jsc are 1.094V, 88.93% and 27.48mA/cm2.

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